BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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II Extension for repetitive pulse operation.

BUDF 데이터시트(PDF) – NXP Semiconductors

Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Typical collector storage and fall time. Budf philips semiconductors, budf datasheet.

BU 2508DF PHI

Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification datazheet not implied.

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SOT; The seating plane is electrically isolated from all terminals. Buaf datasheet, equivalent, cross reference search.

Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet. High collectorbase voltagevcbov high speed switching. This data sheet contains final product specifications. Typical base-emitter saturation voltage.

BU2508DF Datasheet, Equivalent, Cross Reference Search

Silicon diffused power transistor buaf datasheet catalog. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Typical DC current gain. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

C 1 Turn-off current.

Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. Npn dxtasheet diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.

Buaf transistor equivalent substitute crossreference search. July 1 Rev 1.

July 5 Rev 1. Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a datashdet fullpack envelope. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications. Silicon diffused power transistor buaf general description enhanced datssheet, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.

Exposure to limiting values for extended periods may affect device reliability. July 2 Rev 1.

July 6 Rev 1. Budf transistor equivalent substitute crossreference search. Stress above one or more of the limiting values may cause permanent damage to the device. Refer to mounting instructions for F-pack envelopes. Hu2508df I Region of permissible DC operation. This data sheet contains target or goal specifications for product development.

Forward bias safe operating area. No liability will be accepted by the publisher for any consequence of its use. Typical collector-emitter saturation voltage. July 7 Rev 1. Application information Datashert application information is given, it is advisory and does not form part of the specification.