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Improving spin-filtering efficiency in graphene and boron nitride nanoribbon heterostructure decorated with chromium-ligand.

Boron Nitride Nanotubes for Spintronics

An atomic-force microscopy study. In addition to the band gap modulation, functionalization of BNNTs with different molecules have been shown to disentangle and unbundle the multi-walled BNNTs [ 31 — 34 ], as observed in CNTs [ 35 — 38 ] and graphene oey 39 ]; this is an important first step toward their practical application.

They used the tip of a scanning tunneling microscope to apply transverse electric fields and study the influence of these electric fields on the electronic properties of BNNTs [ 22 ]. Guided by leyy above theoretical predictions, Ishigami et al.

On the theoretical front, conjugated molecules, such as poly[ m -phenylenevinylene- co – 2,5-dioctyloxy- p -phenylenevinylene ] PmPVpolystyrene PSand polythiophene PT [ ], [ p – 1,1,3,3-tetramethylbutyl phenyl ether Ly X [ ] are also explored for non-covalent functionalization of BNNTs.

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The bias range from 0 to 2 V is considered. The magnitude of the band gap in BNNTs is strongly affected by the nature of B-N hybridization [ 12 ]; the curvature induced hybridization change leads to smaller band gap with the decrease in diameter. Boron Nitride Nanotubes and Nanosheets. Pey practical applications, one needs to separate the individual BNNT from the bundle. BNNT as a Spin Transistor A spin-valve transistor is a three terminal device analogous to a traditional silicon based transistor MOSFET ; however, the source and drain in the spin-valve transistor [ ] are made from magnetic materials instead of normal metals.

The TMR is calculated from the relative difference in current between the P and AP spin configuration leey in the [ ].

Systematic ab initio study of the optical properties of BN nanotubes. Mechanochemical Synthesis of Boron Nitride Nanotubes. In this scheme, a ferromagnetic channel is usually used between two non-magnetic electron source and drain [ 30]. Theoretical study also reveals that the encapsulation of an electrophilic molecule in BNNT introduces new acceptor states close to the valence band edge of the BNNT making it a p-type semiconductor; encapsulation of nucleophilic molecule in BNNT does not bring about much change in the electronic structure near the Fermi energy [].

Boron Nitride Nanotubes for Spintronics

Properties of Boron Nitride Nanotubes. Humidity sensing properties of single Au-decorated boron nitride nanotubes. A density functional theory simulation.

For example, the band gap of a BNNT with diameter Hydrogen adsorption on zigzag 8, 0 boron nitride nanotubes. Synthesis, characterization and theory. Das Magnetische Moment des Silberatoms. Very recently, Wei et al. It is important to note that ely the fluorinated h-BN sheet with no curvaturethe FM and AFM spin states are almost degenerate [ ].

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Engineering of electronic structure of boron-nitride nanotubes by covalent functionalization.

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Surface-initiated atom transfer radical polymerization of glycidyl methacrylate and styrene from boron nitride nanotubes. Conflicts of Interest The authors declare no conflict of interest.

Electronic structure of radially deformed BN and BC3 nanotubes. Guided by the above experimental report, Gao et al. Selective adsorption of first-row atoms on BN nanotubes. Magnetism in defected single-walled boron nitride nanotubes. However, the development of viable synthesis techniques [ 12 — 20 ], together with various band gap modulating methods [ 21 — 29 ] have rekindled the hope in recent years and brought BNNTs into the lley of material science research.

This effect is diameter dependent; a bigger diameter BNNT exhibits a stronger response to the transverse electric field in comparison to a smaller diameter tube [ 21 ].

Phases and crystallization of encapsulated cobalt nanorods inside BN nanotubes.